, lj nc, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 irf9240/9241 /9242/924s irfp9240/9241 /9242/924s IRF9640/9641 /9642/9g43 p-channel power mosfets preliminary specifications product summary - 200 volt, 0.5 ohm sfet /fi~ % >d \ is part number irf/irfp9240, IRF9640 irf/irfp9241. irf9641 irf/irfp9242, irf9642 irf/irfp9243, irf9643 vos -200v -150v -200v -150v rdsion) 0.50 050 0 70 070 lo -11a -11a -9 oa -9.0a features ? low rdslon) ? improved inductive ruggedness ? fast switching times ? rugged polysllicon gate cell structure ? low input capacitance ? extended safe operating area ? improved high temperature reliability package style package type to3 to-3p to220 part number irf9240/924 1 /9242/924s irfp9240/924 1 /9242/9243 IRF9640/964 1 /9642/9643 maximum ratings characteristic drain-source voltage (1) drain-gate voltage (ros=1 omd) (1) gale-source voltage continuous drain current tc = 25c continuous drain current tc=100c drain current? pulsed (3) gate current? pulsed total power dissipation @ tc = 25c derate above 25c operating and storage junction temperature rangy maximum lead temp, for soldering purposes, 1/8" from case (or 5 seconds symbol vdss vdgr vgs id id idm igm po tj. tstg tl 9240 9640 -200 -200 irf/i 9241 9641 -150 -150 rfp 9242 9642 -200 -200 9243 9643 -150 -150 20 -11 -70 -44 -11 -7.0 -44 -90 -6.0 -36 -90 -6.0 -36 1.5 125 1.0 -55 to 150 300 unit vdc vac vdc adc adc adc adc watts w/c c c notes: (1) tj=25c to 150'c (2) pulse lest: pulse width<300^s. duty cycle<2% (3) repetitive rating: pulse width limited by max. junction temperature nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
irf9240/9241 /9242/924s irfp9240/9241 /9242/924s IRF9640/9641 /9642/964s p-channel power mosfets electrical characteristics (tc = 25c unless otherwise specified) characteristic drain-source breakdown voltage gate threshold voltage gate-source leakage forward gate-source leakage reverse zero gate voltage drain current on-state drain-source current (2) static drain-source on-state resistance (2) forward transconductance (2) input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge (gate-source plus gate-drain) gate-source charge gate-drain ("miller") charge symbol bvoss vgs(th) less less loss 'o(on) rds(on) qfs ciss coss crss td(on) tr td|oll| t| qq q9s q0d type irf9240/2 irfp9240/2 IRF9640/2 irf9241/3 [rfp9241/3 irf9641/3 all all all all irf9240/1 irfp9240/1 IRF9640/1 irf9642 irf9643 irf9240/1 irfp9240/1 IRF9640/1 irf9242/3 irfp9242/3 irf9642/3 all all all all all all all all all all all mln -200 -150 -20 - - - ~- -1 1 -9.0 4.0 - - - ? _ ? - ? - ? typ - - ~ - ? - - - - ? ? ? ? - ? max ? -4.0 -100 100 -250 -1000 ~~ 0.5 0.7 - 1300 450 250 30 15 18 12 90 30 60 units v v v ? na na ma ma a a q 0 0 pf pf pf ns ns ns ns nc nc nc test conditions vgs=ov ln=? 250ua vds=vgs. b=-250^a vgs=-20v vgs=20v vds=max. rating, vgs=ov vds=max. ratingxo.8, vgs=ov, tc=125c vds>b(on| x rosion) max. , vgs~ - 1 0v vgs=-10v, id=-6.0a vos>b(on) x ros(on) max , id ? ? 6 . oa vgs=ov, vds=-25v, f= 1.0mhz vdd = 0.5bvdss, b = -6.0a, zo=4.7fj, (mosfet switching times are essentially independent of operating temperature.) vgs=-15v, id=-22a, vds=0.8 max. rating (gate charge is essentially independent of operating temperature ) thermal resistance junction-to-case case-to-sink junction-to- ambient rlhjc rmcs rthja all all irfpxxxx irf96xx irf92xx - - ? - 1.0 - 1.0 - 80 30 k/w k/w mounting surface flat, smooth, and greased free air operation k/w : notes: (1) tj=25c to 150c (2) pulse test: pulse width?300ms, duty cycle<2% (3) repetitive rating: pulse width limited by max. junction temperature
irf9240/9241 /9242/s243 irfp9240/9241 /9242/924s IRF9640/9641 /9g42/9643 p-channel power mosfets source-drain diode ratings and characteristics characteristic continuous source current (body diode) pulse source current (body diode) (3) diode forward voltage (2) reverse recovery time symbol ic vsd trr type irf9240/1 irfp9240/1 IRF9640/1 irf9242/3 irfp9242/3 irf9642/3 irf9240/1 irfp9240/1 IRF9640/1 irf9242/3 irfp9242/3 irf9642/3 irf9240/i irfp9240/1 IRF9640/1 irf9242/3 irfp9242/3 irf9642/3 all min - ? - ? - typ - ? - ? - max -11 -9.0 -44 -36 -4.6 -4.4 - units a a a a v v ns test conditions modified mosfet symbol -rt^ff showing the integral g-xjy' reverse p-n junction rectifier ^^^s tc = 25c, is=-11a. vgs=ov tc = 25c, ls=-9.0a, vgs=ov tj = 1 50c, if= - 1 1 a,dlf/dt= 1 0oa/^s notes: (1) tj=25c to 150c (2) pulse test: pulse width?300/js, duty cycle<2% (3) repetitive rating: pulse width limited by max. junction temperature i,,. pd, power dissipation (watts) m * 35 ( o o o 5 o ooc s \ \ \ \ \ 40 80 120 tj, junction temperature (*c) breakdown voltage vs. temperature 20 40 60 80 100 120 140 160 tc, case temperature (c) power vs. temperature derating curve 30 40 80 120 i tj, junction temperature co normalized on-reslslance vs. temperature _l -15 -30 -45 -60 lo. drain current (amperes) typical on-reslstance vs. drain current
9 w ?o '5 j en t> ? b ol j t ~ a p r 37.66 38.68 hm k> o to o> ?. o> ol c ? ? 3
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